存储单元(存储电子数据的芯片元件)包括短期易失性(例如 DRAM)和长期非易失性(例如闪存)存储类型。 DRAM 是“工作”(主动)内存的支柱,而闪存则用于以紧凑的形式存储大量数据。
为了提高器件密度以获得更多存储容量,DRAM 特征不断缩小,NAND 闪存已转向三维架构,这带来了额外的工艺挑战。 例如,3D NAND 中的多层结构很容易受到应力的影响,高深宽比通道中的任何缺陷都可能造成电气短路和干扰。 由于使用了新型的、难以处理的材料,生产介于主动类和存储类之间的新型存储器也很困难。 因此,需要卓越的工艺控制、灵活性和生产率。
通过引领创新,泛林集团确保我们的存储解决方案满足不断变化的技术需求。 为了满足 AI、VR、AR 和电动汽车快速增长的需求,我们的高带宽内存(HBM)技术是我们正在创新的领域之一。 HBM 以其 3D 堆叠和尖端封装体现了高性能计算的未来,有望提供无与伦比的性能和效率。
面对先进存储器生产的复杂挑战,例如混合键合晶圆性能和良率管理,我们在微凸块和硅通孔(TSV)方面的专业知识使我们能够提供卓越的工艺控制和生产率。
高级内存
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