記憶體單元(儲存電子數據的晶片元件)包括短期揮發性(例如 DRAM)和長期非揮發性(例如快閃記憶體)儲存類型。 DRAM 是「工作」(活動)記憶體的支柱,而快閃記憶體則用於以緊湊的形式儲存大量數據。
為了提高電子元件密度以獲得更多儲存容量,DRAM的結構特徵持續微縮,同時NAND 快閃記憶體已朝 3D 架構發展,這帶來了更多的製程挑戰。 例如,3D NAND 中的多層結構很容易受到應力的影響,高深寬比通道中的任何缺陷都可能造成電氣短路和干擾。 另一種介於活動型和儲存型記憶體之間的新型記憶體,因為採用了新穎、不易加工的材料,這類記憶體的生產也很困難。 因此,需要卓越的製程控制、靈活性和生產力。
透過引領創新,科林研發確保我們的記憶體解決方案滿足不斷變化的技術需求。 為了滿足 AI、VR、AR 和電動汽車日益增長的需求,我們的高頻寬記憶體(HBM)技術是我們正在創新的領域之一。 HBM 以其 3D 堆疊和先進封裝展現了高效能運算的未來,可望提供無與倫比的效能和效率。
面對先進記憶體生產的複雜挑戰,例如混合接合晶圓效能和良率管理,我們在微凸塊和矽穿孔(TSV)方面的專業知識使我們能夠提供卓越的製程控制和生產力。
先進記憶體
我們的解決方案相關部落格文章
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