圖案化(Patterning)涉及一整套製程步驟 ─ 包括微影、沉積、與蝕刻 ─ 用來形成非常微小、複雜的晶片特徵結構。每一個新世代，元件尺寸都會持續微縮。對先進結構來說，這些特徵結構的尺寸已經太小和/或放置地太緊密，無法以傳統的微影設備來製作 ─ 微影步驟是把晶片設計的複雜細節從光罩「樣板」轉換到晶圓上。為了補償所需的精密度，晶片製造商正利用多重光罩與製程組合的雙重/四重和間隔層式(spacer-based)曝光等先進技術。雖然這些技巧克服了現有微影設備的限制，但是也帶來了對優異製程精密度與薄膜品質的新要求，才能準確地製作出所需的精細、高密度特徵結構。
圖案化
解決方案
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